STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, 400 V drain-source, 6 A continuous drain, 800 mOhm Rds(on) at 10 V gate drive, 8.8 nC gate charge, DPAK surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 400 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 800mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 270 pF @ 100 V |
The STD9N40M2 is housed in a DPAK (TO-252-3) surface-mount package.
The total gate charge is 8.8 nC at 10 V. Input capacitance is 270 pF at 100 V Vds, contributing to a low Miller plateau charge that aids fast turn-on and turn-off transitions in flyback and PFC stages.
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Engineers verify fit by checking voltage, current, and Rds(on).
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