STD95P3LLH6AG

STMicroelectronics

STMicroelectronics STD95P3LLH6AG, Automotive AEC-Q101 STripFET™ H6 P-Channel MOSFET, 30 V Vdss, 80 A Id, 6.9 mOhm Rds(on) at 10 V, DPAK (TO-252-3).

STMicroelectronics STD95P3LLH6AG
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD95P3LLH6AG specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, STripFET™ H6
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±18V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs6.9mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs113 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6250 pF @ 25 V

Technical details

P-channel power switch for automotive loads

The STMicroelectronics STD95P3LLH6AG is a P-channel STripFET H6 power MOSFET built for automotive-grade switching — AEC-Q101 qualified, rated for a drain-source voltage of 30 V and a continuous drain current of 80 A at 25 °C case temperature. The DPAK (TO-252-3) surface-mount package with exposed tab carries 104 W of dissipation (Tc) when properly heatsunk.

The drive voltage range spans 4.5 V to 10 V for minimum and maximum Rds(on), so a 5 V logic-level gate signal works but the on-resistance roughly doubles versus the 10 V figure; the designer should verify the actual Rds(on) at the chosen gate voltage from the transfer curve.

Temperature range and reliability context

STD95P3LLH6AG
[ALLOC] verified
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