STMicroelectronics
STMicroelectronics MDmesh™ II series, STD8NM50N, N-Channel MOSFET, 500 V Vdss, 5 A Id, 790 mOhm Rds(on) @ 2.5 A, DPAK surface-mount package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 790mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 364 pF @ 50 V |
Total gate charge is 14 nC at 10 V. Input capacitance measures 364 pF at 50 V drain-source.
Maximum power dissipation is 45 W at case temperature. The operating temperature is 150 °C junction.
The base product number is STD8NM50, and the suffix N indicates lead-free / RoHS-compliant finish.
