STD8NF25

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II, STD8NF25, N-Channel MOSFET, 250 Vdss, 8 A continuous drain, 420 mOhm Rds(on) at 10 V, 16 nC gate charge, DPAK (TO-252) package, -55°C to 175°C junction temperature.

STMicroelectronics STD8NF25
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD8NF25 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation72W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs420mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds500 pF @ 25 V

Technical details

250 V, 8 A N-channel in DPAK — switching converter workhorse

It targets offline flyback converters, auxiliary power supplies, and 48–72 V telecom DC-DC stages where the 250 V drain-source rating provides margin for reflected-voltage spikes and line transients.

420 mOhm on-resistance — conduction loss at 8 A

The 16 nC typical gate charge at 10 V keeps the gate-drive current modest for a 250 V part; a 100 kHz hard-switched converter draws about 1.6 mA from the driver, well within a standard gate-drive IC's output.

At the high end, the 420 mOhm Rds(on) doubles per the normalised curve — the designer must derate the continuous drain current from 8 A at 25°C case to roughly 4 A at 150°C junction to stay inside the SOA.

STD8NF25
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