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STMicroelectronics STD8N80K5 — Discrete Semiconductors

STD8N80K5 N-Channel MOSFET, 800V 6A DPAK, SuperMESH5™

MPNSTD8N80K5
Active

STMicroelectronics SuperMESH5™ STD8N80K5, N-Channel MOSFET, 800 Vdss, 6 A continuous drain, 950 mOhm Rds(on) at 3 A, 10 V, DPAK (TO-252) surface-mount, -55°C to 150°C.

$2.5200Ref. price · indicative, final on quote
STMicroelectronics STD8N80K5 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD8N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs16.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Product details

The 16.5 nC typical gate charge at 10 V keeps switching losses manageable in the 60–150 kHz range typical of offline converters. Input capacitance is 450 pF at 100 V drain-source, which sets the drive current requirement for the gate driver IC.

DPAK footprint and thermal budget

The threshold voltage is 5 V maximum at 100 µA drain current, typical for a standard-threshold SuperMESH5 device.

The base product number is STD8N80, so any future variants in the same voltage/current class will share the same footprint.

Frequently asked questions

What is the exact Rds(on) and current rating of STD8N80K5?

These are the figures for conduction-loss calculations in a power supply design.

What package does STD8N80K5 come in?

The device is supplied in a TO-252-3 (DPAK) surface-mount package, also designated as SC-63. The supplier device package is DPAK.