Active N-channel 600V MOSFET in DPAK
The STD8N60DM2 is an N-channel power MOSFET from STMicroelectronics' MDmesh DM2 series, rated for 600V drain-to-source voltage and 8A continuous drain current at 25°C case temperature.
Switching performance and conduction losses
With a maximum Rds(on) of 600 milliohms at 4A and 10V gate drive, the conduction loss at rated current is 38.4W — well within the 85W power dissipation limit at case temperature. Gate charge of 13.5 nC at 10V and input capacitance of 375 pF at 100V Vds indicate moderate switching losses suitable for hard-switching topologies in the 50-150 kHz range. The ±30V maximum gate-source voltage provides good noise margin for 10V gate drive circuits common in industrial power supplies and motor drives.
Package and thermal considerations
The DPAK (TO-252) footprint with exposed tab requires a copper pad on the PCB for thermal dissipation — the 85W power rating assumes adequate heatsinking through the tab connection. Maximum junction temperature of 150°C means the device can operate in high-ambient environments, but the thermal resistance from junction to case must be managed for continuous 8A operation.
Sourcing and compliance
Sourced through authorized distribution channels; availability and current pricing are confirmed at RFQ against the BOM quantity.