STD888T4

STMicroelectronics

ST STD888T4 PNP bipolar transistor, 30 V Vce breakdown, 5 A collector current, 15 W power dissipation, DPAK surface-mount package, Tape & Reel.

STMicroelectronics STD888T4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD888T4 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown30 V
Current - collector (Ic)5 A
Current - collector cutoff10µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 500mA, 1V
Power - max15 W
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic1.2V @ 500mA, 10A

Technical details

5 A PNP in a DPAK — the load-switch choice

The STD888T4 is a 30 V, 5 A PNP bipolar power transistor in a DPAK (TO-252-3) surface-mount package. It is a general-purpose PNP for medium-current switching and linear applications where the load sits below 5 A and the rail is 24 V or less.

30 V breakdown, 15 W dissipation — derating matters

The collector-emitter breakdown is rated at 30 V minimum, so a 24 V bus with 10 % margin (26.4 V) stays inside the ceiling. Without adequate pad area, the 15 W figure derates quickly. Vce saturation is specified at 1.2 V maximum with 500 mA base drive and 10 A collector current — that is the on-state voltage drop under heavy load. At the rated 5 A continuous collector current, the saturation voltage will be lower, but the 1.2 V figure at 10 A gives a worst-case conduction loss ceiling for thermal calculations.

STD888T4
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