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STMicroelectronics STD86N3LH5 — Discrete Semiconductors

STD86N3LH5 N-Channel MOSFET, 30 V, 5 mOhm, AEC-Q101

MPNSTD86N3LH5
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STMicroelectronics STD86N3LH5, Automotive AEC-Q101 STripFET™ V, N-Channel MOSFET, 30 V Vdss, 80 A Id, 5 mOhm Rds(on) @ 10 V, DPAK (TO-252) surface mount, 175°C junction.

$1.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD86N3LH5 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, STripFET™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation70W (Tc)
Operating temperature175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1850 pF @ 25 V

Product details

Automotive-grade N-channel MOSFET in DPAK

At 40 A, the voltage drop across the FET is roughly 200 mV, which translates to 8 W of dissipation — within the 70 W package limit but requiring good thermal management via the DPAK's exposed pad. Gate charge is 14 nC at 5 V, so the driver doesn't need to push much current for fast switching. Input capacitance is 1850 pF at 25 V Vds, which is moderate — a typical gate driver with a few ohms of resistance will handle the switching edges cleanly. The 175°C junction rating gives headroom in hot environments like engine bays or sealed enclosures. Derate the 80 A current limit above 25°C per the datasheet's thermal curve.