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STMicroelectronics STD85N3LH5 — Discrete Semiconductors

STD85N3LH5 N-Channel MOSFET, 30V, 80A, 5mOhm DPAK

MPNSTD85N3LH5
Obsolete

STMicroelectronics STripFET™ V series, STD85N3LH5, N-Channel MOSFET, 30 V Vdss, 80 A continuous drain current, 5 mOhm Rds(on) max at 40 A, 10 V gate drive, DPAK surface-mount package.

$1.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD85N3LH5 specifications
ParameterValue
SeriesSTripFET™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation70W (Tc)
Operating temperature175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±22V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1850 pF @ 25 V

Product details

The STD85N3LH5 is an STMicroelectronics N-channel power MOSFET from the STripFET™ V series, built for low-voltage, high-current switching.

Gate drive and switching — the 5 V versus 10 V decision

At 5 V gate drive the Rds(on) roughly doubles from the 10 V figure, which matters if your gate driver runs from a 5 V rail — budget for higher conduction loss or step up the drive. The 14 nC gate charge at 5 V keeps the switching transition fast enough for 100–200 kHz hard-switched converters without oversized gate resistors.

Thermal and layout — the DPAK reality

The DPAK (TO-252) surface-mount package with a single exposed tab carries the 70 W dissipation limit at the case. That tab is the drain — the PCB copper area under it is the primary heatsink. A 1-inch-square copper pad on a 2-oz board gets you into the 40–50 W continuous range; beyond that, forced air or a clip-on heatsink is needed.

If you are qualifying a drop-in alternative, look for a 30 V N-channel MOSFET in DPAK with Rds(on) at or below 5 mOhm at 10 V and gate charge near 14 nC; the STripFET V generation has several siblings in the same package that may match the footprint and thermal pad.

Frequently asked questions

What is the replacement for STD85N3LH5?

For a pin-compatible alternative, look for a 30 V N-channel MOSFET in DPAK with Rds(on) at or below 5 mOhm at 10 V and gate charge near 14 nC within the STripFET V family or equivalent low-voltage trench FET generations.

What is the maximum drain current of STD85N3LH5?

The continuous drain current is rated at 80 A at 25°C case temperature. This is a package-limited rating — the DPAK tab must be adequately heatsunk to sustain that current without exceeding the 175°C junction temperature.