At 10 mOhm max at 10 Vgs, the conduction loss at 40 A is 16 W — well within the 85 W power dissipation rating at the case, but the DPAK's thermal resistance to ambient (not specified here) means the PCB copper area under the tab sets the real current limit in a layout. The 45 nC total gate charge at 10 V is moderate; a typical gate driver delivering 1 A can switch this FET in under 50 ns, keeping transition losses manageable in hard-switched topologies up to about 100 kHz. Input capacitance Ciss is 3100 pF at 50 V drain-source — this is the Miller plateau charge the driver sees. It is consistent with a 100 V / 70 A die in a DPAK and does not require an unusually strong gate driver, but the layout loop from driver to gate should be kept under 20 mm to avoid ringing.
STD85N10F7AG MOSFET N-CH 100V 70A DPAK, Automotive Grade
MPNSTD85N10F7AG
Active
STMicroelectronics STripFET™ STD85N10F7AG, N-Channel MOSFET, 100 V Vdss, 70 A continuous drain, 10 mOhm Rds(on) at 10 V, DPAK (TO-252), AEC-Q101, -55 to 175 °C.
$2.2300Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSTripFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3100 pF @ 50 V |
Product details
Frequently asked questions
Is STD85N10F7AG AEC-Q101 qualified?
Yes, the STD85N10F7AG is AEC-Q101 qualified, which means it has passed the automotive-grade reliability tests for discrete semiconductors.
What is the Vgs threshold of STD85N10F7AG?
The maximum gate threshold voltage Vgs(th) is 4.5 V at a drain current of 250 µA.
What package is STD85N10F7AG?
It is supplied in a DPAK (TO-252-3) surface-mount package, also designated as SC-63. The supplier device package is DPAK.