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STMicroelectronics STD80N6F7 — Discrete Semiconductors

STD80N6F7 N-Channel MOSFET, 60 V, 40 A, 8 mOhm

MPNSTD80N6F7
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STMicroelectronics STripFET™ F7 series N-Channel MOSFET, STD80N6F7, 60 V Vdss, 40 A continuous drain, 8 mOhm Rds(on) max at 10 V gate drive, D-PAK (TO-252) surface mount, -55°C to 175°C.

$0.4796Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD80N6F7 specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 30 V

Product details

60 V, 40 A N-channel MOSFET in D-PAK — STripFET F7

The low gate charge of 25 nC at 10 V keeps switching losses in check for DC-DC converters and motor-drive bridges.

8 mOhm Rds(on) — what it means for conduction loss

That translates to roughly 3.2 W conduction loss at 20 A — manageable with the 100 W power-dissipation ceiling and the TO-252 tab soldered to a decent copper area.

With 25 nC total gate charge at 10 V and 1600 pF input capacitance at 30 V Vds, the STD80N6F7 switches fast enough for 100–200 kHz hard-switched converters without excessive driver losses. The low Qg reduces the burden on the gate-drive IC and keeps the Miller plateau narrow, which helps with EMI control. For a 500 kHz or higher design, you would want a part with even lower capacitance, but for most automotive and industrial 60 V rails this is a solid fit.

The 175°C limit is the junction, not the case — the TO-252 package's thermal resistance means you need to derate the 40 A continuous rating above 100°C case temperature. The 100 W power dissipation is at 25°C case; at 100°C case that drops to about 60 W.

Frequently asked questions

What is the Rds(on) of STD80N6F7?

The maximum Rds(on) is 8 mOhm at 20 A drain current with 10 V gate-to-source voltage. At lower gate drive (e.g., 4.5 V) the on-resistance roughly doubles, so a 10 V gate drive is recommended for full enhancement.

What is the Vgs threshold of STD80N6F7?

The maximum gate threshold voltage is 4 V at 250 µA drain current. Typical threshold is lower, but the 4 V max means a 5 V logic-level gate driver will just barely turn the device on; 10 V drive is the safe choice for low Rds(on).

What is the closest pin-compatible alternative to STD80N6F7?

Within the same STripFET F7 family, the STD80N6F7 shares the same D-PAK (TO-252) footprint and 60 V rating with other 40 A variants. A direct pin-compatible alternative would be another STripFET F7 N-channel MOSFET in the same package with similar Rds(on) and gate charge — check the STMicroelectronics parametric table for the exact substitute based on your current and switching frequency needs.