60 V, 80 A N-channel in DPAK — what this part is
The STMicroelectronics STD80N6F6 is an N-channel power MOSFET built on the DeepGATE™ and STripFET™ VI technology platform. Gate charge totals 122 nC at 10 V, a figure that directly affects the gate-drive power budget and switching speed.
AEC-Q101 and the temperature range
AEC-Q101 qualification adds the stress tests — HTRB, H3TRB, temperature cycling, and autoclave — that a standard commercial MOSFET does not see. For a design targeting 150 °C ambient or a high-vibration environment, this grade gives the reliability margin a commercial part lacks.
The STD80N6F6 is listed as obsolete.
