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STMicroelectronics STD80N4F6 — Discrete Semiconductors

STD80N4F6 MOSFET, N-Ch 40V 80A DPAK, AEC-Q101

MPNSTD80N4F6
Active

STMicroelectronics Automotive, AEC-Q101, DeepGATE™, STripFET™ VI N-Channel MOSFET, 40 V Vdss, 80 A Id, DPAK package, Tape & Reel.

$1.6100Ref. price · indicative, final on quote
STMicroelectronics STD80N4F6 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD80N4F6 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2150 pF @ 25 V

Product details

40 V, 80 A N-channel in DPAK — what the ratings mean for your load

The STD80N4F6 is an N-channel power MOSFET from STMicroelectronics, built on the DeepGATE™ and STripFET™ VI process. The 6 mOhm maximum on-resistance at 40 A and 10 V gate drive means conduction losses stay under 10 W at full rated current — the 70 W package dissipation limit leaves thermal headroom for switching losses in a motor-drive or DC-DC converter application.

Gate charge and input capacitance — sizing the gate driver

Total gate charge is 36 nC at 10 V Vgs. Input capacitance Ciss is 2150 pF at 25 V Vds. This sets the drive impedance needed to stay within the rise-time budget — a 10-Ohm gate resistor gives roughly a 22 ns RC time constant, which is fast enough for most hard-switched topologies without excessive ringing. With a 10 V drive (the recommended Vgs for minimum Rds(on)), the gate overdrive is 6 V — well above the threshold, ensuring full enhancement across the operating temperature range.

Package and board-fit — DPAK footprint

The STD80N4F6 is supplied in a TO-252-3 DPAK package, surface-mount with two leads and a tab. Available in Tape & Reel (TR) and Cut Tape (CT) formats. The DPAK footprint is standard and mates with the same land pattern as other TO-252 devices in the STripFET family.

The base product number is STD80, which covers the 40 V N-channel family in DPAK. The full order code STD80N4F6 distinguishes the 40 V, 80 A variant with the 6 mOhm Rds(on) grade.

Frequently asked questions

Will STD80N4F6 drop into a board designed for STD80N3LL?

Both parts share the same DPAK footprint and are N-channel MOSFETs in the STD80 base family. The key difference is the voltage rating — STD80N4F6 is 40 V, while STD80N3LL is 30 V. If the board's maximum drain voltage stays below 30 V, the STD80N4F6 is a functional drop-in with a slightly higher Rds(on) (6 mOhm vs 5.2 mOhm). The gate drive requirements are the same at 10 V.

What compliance documentation does STMicroelectronics provide for STD80N4F6?

The part is ROHS3 compliant. As an AEC-Q101 qualified device, STMicroelectronics provides a PPAP (Production Part Approval Process) package and a PCN (Product Change Notification) history. Full material declaration and REACH compliance data are available through the standard ST documentation portal.