STMicroelectronics
STMicroelectronics STD80N3LL, N-Channel MOSFET, 30V Vdss, 80A Id, 5.2mOhm Rds(on) @ 40A/10V, 18nC Qg, DPAK (TO-252), -55 to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 75W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 5.2mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1640 pF @ 25 V |
The 18 nC gate charge at 4.5 V means a modest gate driver can switch it fast without excessive drive losses. With a junction temperature range from -55 to 175 °C, it handles the thermal cycling found in automotive under-hood or industrial power supplies.
No second-source or successor is listed in the official record, but the part is widely available through independent distribution.
