STMicroelectronics STD80N240K6 N-Channel MOSFET, 800 V drain-to-source voltage, 16 A continuous drain current, 220 mOhm Rds(on) at 10 V gate drive, 105 W power dissipation, D-PAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 105W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 220mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25.9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1350 pF @ 400 V |
The input capacitance is 1350 pF at 400 V drain bias.
Maximum power dissipation is 105 W at the case, but that figure assumes an ideal heatsink — real-world derating depends on PCB copper area and airflow. The D-PAK package's exposed tab on the drain helps pull heat into the board's ground plane.
It is ROHS3 compliant. For a BOM freeze, this part carries no LTB risk today.
The IRF640 is a 200 V N-channel MOSFET in TO-220, while the STD80N240K6 is an 800 V device in D-PAK. The voltage rating and package differ significantly — they are not direct replacements. Check the circuit's voltage and thermal requirements before substituting.