STMicroelectronics DeepGATE™, STripFET™ VII N-Channel MOSFET, STD80N10F7, 100V Vdss, 70A Id, 10mOhm Rds(on) @ 40A/10V, 45nC gate charge, DPAK (TO-252), -55 to 175°C.
| Parameter | Value |
|---|---|
| Series | DeepGATE™, STripFET™ VII |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3100 pF @ 50 V |
At 40 A the 10 mOhm figure yields conduction loss that drives the thermal design. For a 100 V rail, the 70 A continuous rating is derated by the junction temperature; at 175 °C the current capability drops, but the 175 °C Tj max itself is the spec that keeps this part in the race for high-temperature environments.
No NRND or last-time-buy notice is in effect. ROHS3 compliant. The base product number is STD80; the F7 suffix denotes the STripFET VII generation.
The maximum on-resistance is 10 mOhm at 40 A drain current with a 10 V gate drive. The typical gate charge at 10 V is 45 nC.
The STD80N10F7 is the STripFET VII generation replacement for the earlier STD80N10. Both are 100 V, 70 A N-channel MOSFETs in DPAK. Verify the gate threshold voltage and gate charge differences against your gate-drive circuit before substituting.