STMicroelectronics STD7N60M2, MDmesh™ II Plus series, N-channel MOSFET, 600 V Vdss, 5 A Id, 950 mOhm Rds(on), DPAK (TO-252) surface mount, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 950mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 271 pF @ 100 V |
The STD7N60M2: It is built for hard-switching topologies in off-line power supplies — flyback converters, PFC stages, and auxiliary bias rails where the primary-side switch sees the full rectified DC bus plus leakage spike.
The TO-252-3 (DPAK) package with exposed tab requires a minimum 600 mm² copper area on the drain pad for the 60 W dissipation rating to hold.
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