STD7ANM60N

STMicroelectronics

STMicroelectronics STD7ANM60N, Automotive AEC-Q101, MDmesh™ II, N-Channel MOSFET, 600 V Vdss, 5 A continuous drain, 900 mOhm Rds(on) at 10 V, DPAK surface-mount package.

STMicroelectronics STD7ANM60N
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD7ANM60N specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, MDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation45W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs900mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds363 pF @ 50 V

Technical details

AEC-Q101 qualified 600 V N-channel MOSFET for automotive power stages

The DPAK (TO-252) footprint keeps the board area tight for auxiliary supplies, preload switches, and low-power DC-DC stages.

These numbers together mean the gate driver sees a light load: the 14 nC total gate charge keeps switching losses low even with a modest driver, and the 363 pF Ciss allows fast turn-on without excessive ringing. For a 600 V part in a DPAK, the 45 W power-dissipation ceiling (at case temperature) sets the practical thermal limit; a heatsink or board copper area is expected in continuous operation above a few watts.

Package, mounting, and thermal handling

Surface-mount assembly is standard reflow; no through-hole hardware needed. The ±25 V maximum gate-source rating gives good margin against gate-drive transients in noisy automotive environments.

For buyers building a BOM line, the active status removes the supply-risk clock that obsolete parts carry.

STD7ANM60N
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