STD70N10F4 specifications
Parameter / Attribute	Specification / Value
Series	DeepGATE™, STripFET™
FET type	N-Channel
Mounting	Surface Mount
Drain to source voltage	100 V
Drive voltage (Max rds on, min rds on)	10V
Current - continuous drain (Id) @ 25°C	60A (Tc)
Power dissipation	125W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Package	Tape & Reel (TR) Cut Tape (CT)
Vgs	±20V
Technology	MOSFET (Metal Oxide)
Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id	4V @ 250µA
Rds on (Max) @ id, vgs	19.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs	85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	5800 pF @ 25 V

Technical details

The STMicroelectronics STD70N10F4 is a 100 V, 60 A N-channel power MOSFET built on the DeepGATE™ and STripFET™ technology platform.

On-resistance and gate drive — what 19.5 mOhm at 10 V means for the BOM

The maximum on-resistance of 19.5 mOhm is specified at a drain current of 30 A and a gate-source voltage of 10 V.

The product status is Active, indicating no imminent obsolescence risk and normal supply through the distribution channel.

STD70N10F4

[ALLOC] verified