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STMicroelectronics STD6NM60N-1 — Discrete Semiconductors

STD6NM60N-1 N-Channel MOSFET, 600V, 4.6A, MDmesh II

MPNSTD6NM60N-1
Obsolete

STMicroelectronics STD6NM60N-1, N-Channel MOSFET, MDmesh™ II, 600 V, 4.6 A, 920 mOhm Rds(on) @ 10 V, 13 nC gate charge, TO-251 (IPAK) through-hole package, -55°C to 150°C.

STMicroelectronics STD6NM60N-1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD6NM60N-1 specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.6A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs920mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds420 pF @ 50 V

Product details

The 13 nC gate charge keeps switching losses manageable in flyback or PFC stages running at 100 kHz or so.

Obsolete — planning the BOM transition

The STD6NM60N-1 is marked obsolete by STMicroelectronics. New designs should avoid this part and select an active alternative.

Through-hole TO-251 (IPAK) — mounting and thermal note

The TO-251 (IPAK) package is a through-hole, short-lead variant of the DPAK, intended for vertical mounting on a PCB with the tab soldered to a copper pad for heat spreading. The 45 W dissipation rating assumes the tab is soldered to a sufficient copper area — without that thermal path, junction temperature rises quickly above 4 A continuous. The three short leads suit wave-solder assembly but limit rework access compared to a TO-220.

Frequently asked questions

What is the replacement for STD6NM60N-1?

A cross-reference search for a 600 V, 4.6 A N-channel MOSFET in a TO-251 (IPAK) package is needed. Candidates from ST's own MDmesh series or competitors' equivalent families should be evaluated for Rds(on), gate charge, and thermal performance.