STMicroelectronics · STripFET™ Series
STMicroelectronics STripFET™ N-Channel MOSFET, STD6NF10T4, 100V Vdss, 6A Id, 250mOhm Rds(on), DPAK (TO-252), Tape & Reel.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -65°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 250mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 280 pF @ 25 V |
The STD6NF10T4: That 100 V Vdss puts it in the 80–100 V sweet spot for 48 V telecom bricks, 24 V industrial supplies, and 12 V automotive auxiliary loads with margin for transients.
Housed in the TO-252-3 (DPAK) package, the STD6NF10T4's exposed tab is the drain connection — the PCB land pattern must tie the tab to the drain node with enough copper area to keep the junction below 175 °C at full load.
