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STMicroelectronics STD6N90K5 — Discrete Semiconductors

STD6N90K5 N-Channel MOSFET, 900 V, 6 A, DPAK

MPNSTD6N90K5
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STMicroelectronics STD6N90K5, MDmesh™ K5 series, N-Channel MOSFET, 900 V Vdss, 6 A Id, 1.1 Ohm Rds(on), DPAK (TO-252), -55°C to 150°C.

$2.7200Ref. price · indicative, final on quote
STMicroelectronics STD6N90K5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD6N90K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.1Ohm @ 3A, 10V

Product details

Rds(on) and gate drive — what the 1.1 Ohm rating means for your BOM

The STD6N90K5: That 10 V drive voltage is the minimum recommended for full enhancement — if your controller only delivers 5 V, expect the on-resistance to climb well above the datasheet number. The ±30 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies, but the threshold voltage of 5 V maximum at 100 µA drain current means a 10 V rail is the safe operating point for lowest conduction loss.

DPAK package — thermal and footprint considerations

The DPAK (TO-252) surface-mount package has a three-lead plus exposed-tab footprint. Maximum power dissipation is 110 W at the case temperature.

The base product number STD6N90 covers the family.

Frequently asked questions

What is the Rds(on) of STD6N90K5?

That is the value to use for worst-case conduction loss calculations.