Skip to main content
Log in
STMicroelectronics STD6N65M2 — Discrete Semiconductors

STD6N65M2 N-Channel 650 V 4 A MOSFET, MDmesh, DPAK

MPNSTD6N65M2
Active

STMicroelectronics MDmesh™ N-Channel MOSFET, STD6N65M2, 650 V Vdss, 4 A Id, 1.35 Ohm Rds(on) at 2 A, 10 V, 9.8 nC gate charge, DPAK (TO-252), -55 to 150 °C.

$1.3600Ref. price · indicative, final on quote
STMicroelectronics STD6N65M2 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD6N65M2 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.35Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs9.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds226 pF @ 100 V

Product details

650 V MDmesh N-channel — primary-side switch for offline supplies

1.35 Ohm Rds(on) — conduction loss floor at 2 A

Rds(on) is specified at 1.35 Ohm maximum with Vgs = 10 V and Id = 2 A. That is the figure to use for the worst-case conduction loss calculation at the target operating current. At 4 A the on-resistance will be higher — the datasheet curve shows the typical Rds(on) versus drain current — so budget accordingly if you are running near the continuous rating. If your controller outputs 12 V, the ±25 V Vgs max gives plenty of margin.

9.8 nC gate charge — light load on the driver

That is low enough that many PWM controllers can drive it directly through a series resistor without a separate gate driver IC.

Frequently asked questions

What is the exact Rds(on) and Vgs(th) of STD6N65M2?

Maximum Rds(on) is 1.35 Ohm at Id = 2 A and Vgs = 10 V. Maximum gate threshold voltage is 4 V at Id = 250 µA.