620 V N-channel MOSFET in DPAK — offline power switch
Conduction and switching parametrics
Maximum on-resistance is 1.28 Ohm at a drain current of 2.8 A and a gate drive of 10 V. Total gate charge at 10 V is 25.7 nC, and input capacitance at 50 V drain bias is 706 pF. These numbers keep the gate-driver current requirement modest — a typical 1 A driver can switch this FET at several hundred kilohertz without excessive drive losses. Maximum power dissipation is 90 W at the case, and the junction temperature rating is 150°C. In a DPAK soldered to a reasonable copper area on the PCB, the effective thermal resistance will limit continuous dissipation well below 90 W; the 90 W figure assumes an ideal heatsink at 25°C case.
The base product number is STD6, covering the 620 V family variants.