STMicroelectronics
STMicroelectronics STD6N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 4.5 A continuous drain, 1.2 Ohm Rds(on) at 10 V, 8 nC gate charge, DPAK surface-mount package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.5A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 2.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 232 pF @ 100 V |
The STD6N60M2: Gate charge is 8 nC at 10 V.
Threshold is 4 V max at 250 µA.
The base product number STD6N60 covers the family; the M2 suffix identifies this specific MDmesh II Plus variant.
