STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 600 V Vdss, 5 A continuous drain (Tc), 1.1 Ohm Rds(on) at 2.5 A, 10 V, 6.2 nC gate charge, D-PAK (TO-252) surface mount, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 1.1Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 274 pF @ 100 V |
The STD6N60DM2 is an N-channel MOSFET in a D-PAK (TO-252) surface-mount package, rated 600 V Vdss and 5 A continuous drain.
Maximum on-resistance is 1.1 Ohm at 2.5 A drain current with 10 V gate drive.
Yes. The drain-source breakdown voltage is 600 V, providing more than 10× headroom over a nominal 48 V bus. The 5 A continuous drain rating and 1.1 Ohm Rds(on) are well within typical 48 V power-conversion and load-switching requirements.