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STMicroelectronics STD65NF06 — Discrete Semiconductors

STD65NF06 N-Channel MOSFET, 60V 60A DPAK, Obsolete

MPNSTD65NF06
Obsolete

STMicroelectronics STripFET™ II, STD65NF06, N-Channel MOSFET, 60V Vdss, 60A Id, 14mOhm Rds(on) at 10V, DPAK (TO-252-3), -55°C to 175°C.

STMicroelectronics STD65NF06 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD65NF06 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 25 V

Product details

The STD65NF06 is a 60 V, 60 A N-channel power MOSFET from STMicroelectronics' STripFET™ II series, housed in a DPAK (TO-252-3) surface-mount package. Gate charge is 75 nC at 10 V.

For a new design you need a pin-compatible current-production N-channel MOSFET in DPAK with similar or better Rds(on) and gate charge — a 60 V trench device from the same or another vendor.

Package and reflow — DPAK realities

The DPAK (TO-252-3) is a common surface-mount power package with a large exposed tab that carries the drain current and dissipates heat.

Frequently asked questions

What is the Rds(on) of STD65NF06?

This is the spec to use for worst-case conduction loss calculations.