STMicroelectronics STripFET™ III series, STD65N55LF3, N-Channel MOSFET, 55 V Vdss, 80 A continuous drain, 8.5 mOhm Rds(on) at 10 V, DPAK (TO-252) surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 8.5mOhm @ 32A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 2200 pF @ 25 V |
The drive voltage range of 5 V to 10 V allows logic-level gate drive compatibility, though the Rds(on) at 5 V is not specified — expect higher resistance at the lower drive voltage. Gate charge is 20 nC at 5 V, which moderates switching losses in hard-switched topologies.
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No official direct replacement or successor is listed by STMicroelectronics for the STD65N55LF3. For a pin-compatible alternative, look for other N-channel MOSFETs in the DPAK (TO-252) package with similar 55 V Vdss and 80 A current rating from the same or other manufacturers, but verify gate drive and Rds(on) specifications against your design requirements.