30 V, 65 A N-channel in DPAK — STripFET V
The STMicroelectronics STD65N3LLH5 is a 30 V, 65 A N-channel power MOSFET built on the STripFET V process, optimized for low-voltage, high-efficiency switching. Gate charge is just 8 nC at 4.5 V, so a modest gate driver can switch it fast without excessive drive current. The DPAK (TO-252) surface-mount package suits medium-power boards where thermal dissipation goes through the tab to the PCB copper.
The 6.9 mOhm maximum at 32.5 A and 10 V drive is the headline number for conduction loss budgeting. At the rated 65 A continuous drain current, that resistance would dissipate roughly 29 W — but the 50 W package limit and junction-to-case thermal path mean real-world current is derated by ambient temperature and PCB copper area. The 4.5 V drive voltage option (minimum Rds(on) spec) lets logic-level gate signals turn it on hard, though the on-resistance will be higher than at 10 V; the datasheet curve tells the exact ratio. Input capacitance of 1290 pF at 25 V is moderate, keeping switching losses manageable in the 100–500 kHz range typical for low-voltage converters.
No official successor part is listed in the record. Sealed factory reels with consistent date-codes are the preferred lot condition; mixed-date auction lots should be inspected for authenticity before committing to a production run.
The 175°C max is 25°C above the more common 150°C limit, giving extra headroom for designs that push the thermal budget. The ±22 V maximum gate-source voltage means standard 12 V or 15 V gate drives are safe, but the 3 V threshold at 250 µA means the device is fully off below 3 V — a consideration when the gate driver loses its supply.