650 V N-channel in a DPAK — switching supply workhorse
The STD65N160M9 is an STMicroelectronics N-channel power MOSFET from the MDmesh M9 series, built for high-voltage switching applications.
Rds(on) is specified at 160 mOhm maximum with 10 A drain current and 10 V gate drive — the 10 V drive voltage is the recommended rail for minimum on-resistance. At 17 A continuous drain current and 25°C case temperature, the conduction loss at full load is I²R = 46 W, which sits within the 106 W power dissipation rating at the case. Gate charge is 32 nC at 10 V. Input capacitance is 1239 pF at 400 V drain-source.