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STMicroelectronics STD60NF55LT4 — Discrete Semiconductors

STD60NF55LT4 MOSFET N-Ch 55V 60A DPAK, 15 mOhm Rds(on)

MPNSTD60NF55LT4
Active

STMicroelectronics STripFET™ II, STD60NF55LT4, N-Channel MOSFET, 55 V Vdss, 60 A Id, 15 mOhm Rds(on) at 10 V, DPAK, -55°C to 175°C.

$1.7200Ref. price · indicative, final on quote
STMicroelectronics STD60NF55LT4 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD60NF55LT4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 25 V

Product details

The STD60NF55LT4: Gate threshold voltage is 2 V max at 250 µA drain current, with a drive voltage window of 4.5 V to 10 V for achieving rated Rds(on). Total gate charge at 5 V is 56 nC — a figure that dictates the driver current needed to hit the target switching frequency without excessive cross-conduction loss. Input capacitance Ciss is 1950 pF at 25 V drain-source bias, which together with the gate charge gives a practical switching speed ceiling in hard-switched topologies. The ±15 V maximum gate-source rating provides headroom for gate-drive overshoot in noisy environments.

175°C junction — harsh-environment capability

DPAK surface-mount package

The DPAK footprint is a common industry standard, easing layout reuse across multiple power MOSFET variants.

Frequently asked questions

Can I use STD60NF55LT4 as a replacement for IRFZ44?

Both are N-channel 55 V MOSFETs, but the IRFZ44 is a TO-220 through-hole part while the STD60NF55LT4 is a DPAK surface-mount device. The footprints are incompatible without a board redesign. Electrically, the STD60NF55LT4's 15 mOhm Rds(on) is lower than the IRFZ44's typical 17.5 mOhm, so conduction losses will be slightly lower if the thermal path in the DPAK layout is adequate.