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STMicroelectronics STD60NF06T4 — Discrete Semiconductors

STD60NF06T4 N-Channel MOSFET, 60V, 60A, 16mOhm

MPNSTD60NF06T4
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STMicroelectronics STD60NF06T4, STripFET™ II, N-Channel MOSFET, 60 V Vdss, 60 A continuous drain, 16 mOhm Rds(on) at 10V, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.

$2.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD60NF06T4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1810 pF @ 25 V

Product details

16 mOhm at 10V — the switching spec that matters

Gate charge is 66 nC typical at 10 V, which keeps the switching transition fast enough for PWM frequencies up to several tens of kilohertz without oversized gate drivers.

175°C junction — wider margin than most

Rated operating junction temperature from -55°C to 175°C, which exceeds the usual automotive-grade 150°C limit. This extra headroom matters for under-hood electronics, engine bay modules, and any design where the MOSFET sits near a heat source or sees repetitive avalanche stress.

Frequently asked questions

Is STD60NF06T4 obsolete?

No.

What is the Rds(on) of STD60NF06T4?

Maximum on-resistance is 16 mOhm at 30 A drain current with 10 V gate drive.

What is the maximum current for STD60NF06T4?

Continuous drain current is 60 A at 25°C case temperature.