Skip to main content
Log in
STMicroelectronics STD60N3LH5 — Discrete Semiconductors

STD60N3LH5 N-Channel MOSFET, 30V 48A, DPAK, Obsolete

MPNSTD60N3LH5
Obsolete

STMicroelectronics STripFET™ V series STD60N3LH5, N-Channel MOSFET, 30V Vdss, 48A continuous drain, 8mOhm Rds(on) at 10V, 8.8nC gate charge, DPAK surface-mount package.

$0.6200Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD60N3LH5 specifications
ParameterValue
SeriesSTripFET™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 24A, 10V
Gate charge (Qg) (Max) @ vgs8.8 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 25 V

Product details

STD60N3LH5 — a 30V N-channel STripFET V MOSFET in DPAK

The STMicroelectronics STD60N3LH5 is a 30V N-channel power MOSFET from the STripFET™ V generation, built with a planar stripe layout that delivers low on-resistance and fast switching. The 8.8 nC typical gate charge at 5V keeps gate-drive losses low in high-frequency DC-DC converters and synchronous rectifier stages.

The 30V Vdss rating gives 20% derating margin on a 12V or 24V rail, but on a 24V bus with transients you should check the avalanche ruggedness against your inductive load. The 48A continuous drain current is a package-limited figure at Tc=25°C — real-world current depends on PCB copper area and airflow; the 60W maximum dissipation is the thermal ceiling. The 8mOhm Rds(on) at 10V gate drive is the headline number; at 5V drive the Rds(on) roughly doubles, so verify the logic-level gate voltage against the gate threshold voltage (3V max at 250µA) to ensure full enhancement. The 8.8 nC gate charge at 5V means the gate driver sees a light capacitive load, supporting switching frequencies above 200 kHz without excessive cross-conduction loss.

DPAK footprint and reflow considerations

The DPAK (TO-252) is a standard surface-mount power package with two leads plus a large drain tab.

Frequently asked questions

Is STD60N3LH5 obsolete?

Yes, the STD60N3LH5 carries an obsolete lifecycle status. It is no longer manufactured by STMicroelectronics and must be sourced through surplus or broker channels.

What is the replacement for STD60N3LH5?

For a new design, look at active STripFET V or STripFET F7 N-channel MOSFETs in the 30V, DPAK package class with similar Rds(on) and gate charge. For an existing BOM, the surplus channel is the practical supply path.

What is the difference between STD60N3LH5 and STD60N3LH5G?

The suffix 'G' typically indicates a lead-free or halogen-free finish variant. The electrical specifications — 30V Vdss, 48A Id, 8mOhm Rds(on), 8.8 nC Qg — are identical between the two. The 'G' variant meets RoHS and similar environmental compliance requirements.

Can I use STD60N3LH5 as a substitute for another N-channel MOSFET?

As a 30V, 48A, 8mOhm Rds(on) N-channel MOSFET in DPAK, it can substitute for parts with similar or lower voltage and current ratings, provided the gate threshold voltage (3V max at 250µA) and gate drive voltage (5V or 10V) are compatible. Always compare the gate charge, input capacitance (1350 pF at 25V), and switching characteristics against the original part to confirm timing and drive margin.