STD5NM60T4

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh™ N-Channel MOSFET, STD5NM60T4, 600V Vdss, 5A Id, 1 Ohm Rds(on) at 10V, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.

STMicroelectronics STD5NM60T4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD5NM60T4 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 25 V

Technical details

600 V, 5 A N-channel MDmesh™ MOSFET in DPAK

No last-time-buy or end-of-life notice on record. The part is ROHS3 compliant.

Field-fit and handling

The DPAK (TO-252) package is a common surface-mount power package with a tab that carries the drain. Orientation is straightforward: the tab is drain, gate is the left pin (when the tab faces away), source is the right pin. No lab bench needed for a swap — just a soldering iron, solder wick, and a steady hand.

STD5NM60T4
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