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STMicroelectronics STD5NM60-1 — Discrete Semiconductors

STD5NM60-1 N-Channel MOSFET, 600V, 5A, MDmesh™, I-PAK

MPNSTD5NM60-1
Active

STMicroelectronics MDmesh™ N-Channel MOSFET, STD5NM60-1, 600V Vdss, 5A Id, 1Ω Rds(on), 18nC Qg, I-PAK through-hole package.

$2.6500Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD5NM60-1 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 25 V

Product details

600V, 5A N-Channel in MDmesh™ — what the ratings mean for your BOM

The STD5NM60-1: The 600V drain-source breakdown voltage gives it headroom for universal-input offline flyback converters, PFC stages, and auxiliary supplies where the DC bus sits around 400V and switching transients can ring well above that. Maximum on-resistance is 1Ω at 2.5A with a 10V gate drive. That 1Ω figure is the ceiling at 25°C junction — expect it to roughly double at 150°C junction, so the conduction loss at full load in a hot enclosure is higher than the datasheet typical suggests. The 18nC total gate charge at 10V means the gate driver only needs to source about 18nC per switching cycle; at 100kHz switching frequency that works out to roughly 1.8mA average drive current, easily handled by a standard gate-driver IC.

Thermal budget and package — through-hole I-PAK

Maximum power dissipation is 96W at case temperature 25°C, but that derates quickly as the case heats up. In practice, with the I-PAK (TO-251AA) through-hole package, the junction-to-ambient thermal resistance is high — expect the 96W figure to be reachable only with a heatsink bolted to the tab or a good copper pour on the PCB. The through-hole leads handle moderate mechanical stress and are easier to hand-solder or rework than surface-mount packages. Operating junction temperature range is -55°C to 150°C, covering industrial and automotive under-hood ambient conditions. The 400pF input capacitance at 25V drain-source means the gate drive sees a moderate capacitive load — a 10Ω gate resistor gives a roughly 4ns RC time constant, fast enough for most hard-switching topologies without excessive ringing.

Frequently asked questions

How does the STD5NM60-1 compare to the STI6N95K5 for a drop-in replacement?

The STI6N95K5 is a 950V, 9A device in the MDmesh™ K5 series — it has a higher voltage rating and current capability but a different package (I2PAK) and a 1.25Ω Rds(on). The STD5NM60-1 will not drop into a board designed for the STI6N95K5 without verifying the footprint: the I-PAK and I2PAK have different lead spacing and tab dimensions. The gate drive requirements also differ — the STI6N95K5 has 13nC Qg versus 18nC for the STD5NM60-1, so the drive circuit may need adjustment.