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STMicroelectronics STD5NM50AG — Discrete Semiconductors

STD5NM50AG N-Channel MOSFET, 500V 7.5A DPAK

MPNSTD5NM50AG
Active

STMicroelectronics MDmesh™ N-Channel MOSFET, STD5NM50AG, 500V Vdss, 7.5A Id, 800mOhm Rds(on), DPAK-3 (TO-252) surface mount, Tape & Reel.

$1.8400Ref. price · indicative, final on quote
STMicroelectronics STD5NM50AG datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD5NM50AG specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.5A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs800mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds415 pF @ 100 V

Product details

500 V, 7.5 A N-channel MOSFET in DPAK

The STD5NM50AG: Packaged in a TO-252 (DPAK) surface-mount outline with an exposed tab for thermal transfer to the PCB copper plane.

On-resistance and gate charge for switching loss budget

Gate charge totals 13 nC at 10 V Vgs — a driver sourcing 1 A can switch the gate in 13 ns, though the practical switching speed is limited by the gate loop inductance and the driver's peak current capability. Input capacitance is 415 pF at 100 V Vds — this capacitance charges and discharges through the gate resistor each cycle, contributing to the gate drive power loss at frequency.

Thermal and voltage margins for industrial designs

Gate-source voltage is rated to ±30 V absolute maximum, providing margin against overshoot from a poorly damped gate drive trace in a noisy power stage layout.