520 V N-channel MOSFET for off-line power conversion
The TO-251 I-PAK through-hole package suits single-sided boards or designs where a heatsink is soldered to the tab.
On-resistance and gate charge — the switching loss trade-off
Rds(on) of 1.5 Ohm at 10 V is moderate for a 520 V device; conduction loss at 2 A is about 6 W, which the 70 W package dissipation can handle with adequate heatsinking. The 16.9 nC total gate charge keeps the gate-drive energy low, so a small-signal MOSFET driver or a PWM controller output can switch it at 100 kHz without excessive driver dissipation. Input capacitance of 529 pF at 25 V means the Miller plateau is manageable for most offline controllers.
It is no longer manufactured by STMicroelectronics and has no official successor listed. Buyers needing this exact part for repair, legacy BOM, or last-time-buy fulfillment should source through independent distribution.
Temperature grade and application environment
The wide temperature margin also supports derating for reliability in long-life designs.
