STMicroelectronics SuperMESH™ N-Channel MOSFET, 500 V Vdss, 4.4 A Id, 1.5 Ohm Rds(on) @ 10 V, 70 W, TO-251-3 (IPak) through-hole, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.4A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1.5Ohm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 535 pF @ 25 V |
The STD5NK50Z-1: The device comes in a through-hole TO-251-3 (IPak) package with short leads.
These numbers tell you the gate driver needs to source about 28 nC per switching cycle — manageable with a standard gate-drive IC or a discrete totem-pole. The ±30 V maximum gate-source rating gives some headroom against ringing on long gate traces, but keep the layout tight to avoid exceeding it during hard switching.
Yes, STD5NK50Z-1 is listed as Obsolete by STMicroelectronics. It is no longer manufactured but can be sourced through independent distribution against an RFQ.
STMicroelectronics has not published an official successor order code for the STD5NK50Z-1. For new designs, select a current-production 500 V N-channel MOSFET in a TO-251 or surface-mount DPAK package with similar Rds(on) and gate charge. Cross-reference against ST's current SuperMESH or MDmesh families, but verify pin compatibility and thermal performance for your specific application.