STMicroelectronics SuperMESH5™ STD5N95K5, N-Channel MOSFET, 950 V Vdss, 3.5 A Id, 2.5 Ohm Rds(on) at 1.5 A, 10 V, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH5™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 950 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 2.5Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 220 pF @ 100 V |
The STD5N95K5: Total gate charge (Qg) is 12.5 nC at 10 V, and input capacitance (Ciss) is 220 pF at 100 V drain-source.
The base product number STD5N95 covers the DPAK variant; the K5 suffix identifies the SuperMESH5 generation.
The STD5N95K5 is a DPAK surface-mount device, while the STP3NK90Z is a TO-220 through-hole part — they are not footprint-compatible. Electrically, the STD5N95K5 offers a higher 950 V Vdss (vs 900 V) and a lower 2.5 Ohm Rds(on) (vs ~4.5 Ohm), but the package difference prevents a direct drop-in replacement without a board layout change.