STD5N80K5

STMicroelectronics · MDmesh™ Series

STMicroelectronics STD5N80K5, MDmesh™ series, N-Channel MOSFET, 800 V Vdss, 4 A Id, 1.75 Ohm Rds(on), DPAK (TO-252), -55 to 150 °C junction temperature.

STMicroelectronics STD5N80K5
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD5N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.75Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds177 pF @ 100 V

Technical details

The input capacitance is 177 pF at 100 V drain-source, so the Miller plateau is short and the switching edges are clean with a well-laid-out gate loop. The threshold voltage is specified at 5 V maximum at 100 µA drain current, with a recommended drive voltage of 10 V for minimum on-resistance. This is a standard-threshold part — not logic-level — so ensure your gate driver swings to at least 10 V to get the rated Rds(on).

Temperature range and package — where it lives on the board

The junction temperature range is -55 to 150 °C, which covers industrial and many automotive under-hood environments. The base product number is STD5N80, so this is the K5 variant of the 800 V, 4 A DPAK family.

It is ROHS3 compliant.

STD5N80K5
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