STMicroelectronics · SuperMESH3™ Series
STMicroelectronics SuperMESH3™ STD5N62K3, N-Channel MOSFET, 620 V Vdss, 4.2 A Id, 1.6 Ohm Rds(on) at 10 V, DPAK surface-mount package.
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 620 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.2A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1.6Ohm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 680 pF @ 50 V |
Input capacitance Ciss is 680 pF at 50 V drain-source, a figure that influences the switching speed and the driver's peak current requirement.
The wide temperature grade suits it for industrial power supplies and automotive auxiliary loads where the ambient can push beyond 85°C.
