STMicroelectronics MDmesh™ II Plus N-Channel MOSFET, 600V Vdss, 3.5A Id, 1.4 Ohm Rds(on) at 10V, 8.5 nC Qg, DPAK (TO-252) surface-mount package, 150°C TJ max.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 1.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 211 pF @ 100 V |
The STMicroelectronics STD5N60M2 is a 600 V N-channel power MOSFET built on the MDmesh™ II Plus technology. It delivers 3.5 A continuous drain current at 25°C case temperature, with a maximum on-resistance of 1.4 Ohm at 1.7 A and 10 V gate drive.
At 1.4 Ohm max, the on-resistance at 10 V drive is the number you use for conduction-loss budgeting at the operating current.
Maximum on-resistance is 1.4 Ohm at 1.7 A drain current with a 10 V gate drive.
Yes, it is ROHS3 compliant.
The MDmesh II Plus generation (M2 suffix) offers lower gate charge and improved switching performance compared to the earlier M1 generation, but both are 600 V N-channel MOSFETs in DPAK. Pin-compatible for a drop-in swap where the Rds(on) and Qg differences fit the design margin.