600 V N-channel MOSFET in DPAK — MDmesh DM2 series
The STD5N60DM2: 1.55 Ohm maximum on-resistance at 1.75 A and 10 V gate drive, 8.6 nC gate charge at 10 V.
Gate drive and switching performance
8.6 nC total gate charge at 10 V, 375 pF input capacitance at 100 V drain bias. The maximum gate-source voltage rating of ±30 V gives margin over the typical 10 V drive level, reducing the risk of oxide rupture during ringing on the gate node in a hard-switched layout.
It is ROHS3 compliant. For new BOMs, this part can be specified without near-term obsolescence risk, and the MDmesh DM2 series is an ongoing ST product family, so second-source qualification is not urgent.
