STD5N52U

STMicroelectronics · UltraFASTmesh™ Series

MOSFET N-CH 525V 4.4A DPAK

STMicroelectronics STD5N52U
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD5N52U specifications
Parameter / AttributeSpecification / Value
SeriesUltraFASTmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage525 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.4A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.5Ohm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs16.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds529 pF @ 25 V
STD5N52U
[ALLOC] verified
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