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STMicroelectronics STD5N20T4 — Discrete Semiconductors

STD5N20T4 N-Channel MOSFET, 200 V, 5 A, DPAK

MPNSTD5N20T4
Obsolete

STMicroelectronics STD5N20T4, MESH OVERLAY™ N-Channel MOSFET, 200 V Vdss, 5 A Id, 800 mOhm Rds(on) at 10 V, DPAK surface-mount package.

STMicroelectronics STD5N20T4 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD5N20T4 specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation45W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs800mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V

Product details

If your design can tolerate a parametric shift, a cross-reference search against 200 V, 5 A N-channel MOSFETs in DPAK from other manufacturers may yield a drop-in alternative, but no pin-compatible second source is recorded in the official documentation.

Gate drive and switching considerations

The gate threshold voltage is specified at 4 V maximum with 250 µA drain current, and the recommended drive voltage for achieving the rated on-resistance is 10 V. These numbers are modest — a standard gate driver or a PWM controller output can drive the gate without excessive switching losses at frequencies typical of flyback and forward converters (tens to low hundreds of kilohertz).

Frequently asked questions

What are the specifications of STD5N20T4?

It comes in a DPAK surface-mount package and operates with a junction temperature up to 150 °C.