STD5N20LT4

STMicroelectronics · STripFET™ Series

STMicroelectronics STripFET™ STD5N20LT4, N-Channel MOSFET, 200 V Vdss, 5 A Id, 700 mOhm Rds(on) at 5 V, 6 nC Qg, DPAK surface mount, -55 to 150 °C.

STMicroelectronics STD5N20LT4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD5N20LT4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 50µA
Rds on (Max) @ id, vgs700mOhm @ 2.5A, 5V
Gate charge (Qg) (Max) @ vgs6 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds242 pF @ 25 V

Technical details

Maximum on-resistance is 700 mOhm at 2.5 A drain current with a 5 V gate drive. That is a relatively high Rds(on) for a 200 V part, which means conduction loss will be noticeable if you push the full 5 A — at that current the dissipation in the channel alone is 17.5 W, well within the 33 W package limit but demanding a good thermal path to the PCB copper. Gate charge is only 6 nC at 5 V, so a logic-level output or a modest gate driver can switch this MOSFET at moderate frequencies without a lot of drive current. Input capacitance is 242 pF at 25 V drain-source, which keeps the switching node capacitance low and helps with fast turn-on edges.

Temperature range and package — field-fit reality

No lab bench needed to swap one, but the tab solder joint matters.

Lifecycle and sourcing — still in production

It is ROHS3 compliant.

STD5N20LT4
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