Maximum on-resistance is 700 mOhm at 2.5 A drain current with a 5 V gate drive. That is a relatively high Rds(on) for a 200 V part, which means conduction loss will be noticeable if you push the full 5 A — at that current the dissipation in the channel alone is 17.5 W, well within the 33 W package limit but demanding a good thermal path to the PCB copper. Gate charge is only 6 nC at 5 V, so a logic-level output or a modest gate driver can switch this MOSFET at moderate frequencies without a lot of drive current. Input capacitance is 242 pF at 25 V drain-source, which keeps the switching node capacitance low and helps with fast turn-on edges.
Temperature range and package — field-fit reality
No lab bench needed to swap one, but the tab solder joint matters.
Lifecycle and sourcing — still in production
It is ROHS3 compliant.
