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STMicroelectronics STD55NH2LLT4 — Discrete Semiconductors

STD55NH2LLT4 ST N-Channel MOSFET, 24 V, 40 A, DPAK

MPNSTD55NH2LLT4
Obsolete

STMicroelectronics STripFET™ Series STD55NH2LLT4 N-Channel MOSFET, 24 V Vdss, 40 A Id, 11 mOhm Rds(on) at 20 A, 10 V, DPAK, -55°C to 175°C.

$0.5239Ref. price · indicative, final on quote
STMicroelectronics STD55NH2LLT4 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD55NH2LLT4 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds990 pF @ 25 V

Product details

Low-voltage, high-current N-channel in DPAK

The STMicroelectronics STD55NH2LLT4 is an N-channel MOSFET from the STripFET™ series, designed for low-voltage, high-current switching.

The gate charge is 11 nC at 4.5 V, so the drive stage doesn't need a high-current gate driver — a standard 1 A driver handles the switching edges cleanly. For a 40 A load, the 60 W package dissipation limit at the case means the thermal interface and heatsinking need attention; the DPAK's exposed tab helps pull heat into the board copper.

Buyers should qualify replacement parts for new designs.

Frequently asked questions

What is the replacement for STD55NH2LLT4?

No official replacement is listed in the product record. For new designs, select a current-production N-channel MOSFET in DPAK with similar 24 V Vdss, 40 A Id, and 11 mOhm Rds(on) ratings.