STMicroelectronics STD50NH02L-1
MPNSTD50NH02L-1
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 24 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 10.5mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 25 V |