STD4N62K3

STMicroelectronics · SuperMESH3™ Series

STMicroelectronics SuperMESH3™ STD4N62K3, N-Channel MOSFET, 620 V Vdss, 3.8 A Id, 1.95 Ohm Rds(on) at 10 V, DPAK package, 150 °C junction temperature.

STMicroelectronics STD4N62K3
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD4N62K3 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH3™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.8A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.95Ohm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 50 V

Technical details

620 V N-channel in DPAK — switching loss and conduction budget

The 70 W power dissipation rating at the case gives the thermal budget for the DPAK package — the actual junction-to-ambient thermal resistance depends on the copper area on the drain tab pad.

Gate charge and drive requirements

Total gate charge is 14 nC at 10 V, which keeps the drive current modest even at switching frequencies above 100 kHz — a 14 nC gate switched at 100 kHz draws 1.4 mA average from the driver. The input capacitance is 450 pF at 50 V drain bias, so the gate-drive loop inductance and the driver's peak current capability set the turn-on and turn-off edge rates. The gate-source threshold voltage is 4.5 V maximum at 50 µA drain current, meaning a 10 V drive rail is needed to achieve the rated Rds(on); a 5 V logic-level gate drive will not fully enhance the channel.

Package and mounting — DPAK thermal interface

The TO-252-3 (DPAK) surface-mount package has a drain tab that is the primary thermal path.

STD4N62K3
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