STD45P4LLF6AG

STMicroelectronics

STMicroelectronics STD45P4LLF6AG, Automotive STripFET™ F6 P-Channel MOSFET, 40 V Vdss, 50 A Id, 15 mOhm Rds(on) at 10 V, DPAK (TO-252-3), -55°C to 150°C.

STMicroelectronics STD45P4LLF6AG
Download datasheet (PDF)
[IN STOCK] In Stock: 8 pcs
$1.46/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD45P4LLF6AG specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, STripFET™ F6
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation58W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±18V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs65.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3525 pF @ 25 V

Technical details

Gate drive and switching — what the 4.5 V / 10 V drive voltage tells you

The 65.5 nC typical gate charge at 10 V means the gate driver needs to source and sink that charge within the switching period; a 1 A driver will turn the FET on in about 65 ns, but the 3525 pF input capacitance at 25 V drain-source adds to the driver's reactive load. For PWM frequencies above 20 kHz, budget gate-drive power dissipation and switching losses in the total loss calculation.

Temperature range and qualification — where this part is used

For designs targeting ISO 26262 or customer-specific reliability programs, the AEC-Q101 lot traceability and PPAP documentation should be available from STMicroelectronics.

STD45P4LLF6AG
[ALLOC] verified
Quote